@article {120,
  title = {Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing},
  author = {Milazzo, R. and Carnera, A. and De Salvador, D. and Fortunato, G. and Impellizzeri, G. and Napolitani, E. and Portavoce, A. and Mangelinck, D. and Privitera, V. and Piccinotti, D. and La Magna, A.},
  journal = {Applied Physics Letters},
  pages = {011905},
  year = {2017},
  volume = {110},
  doi = {10.1063/1.4973461},
  url = {https://metsa.ows.fr/publication/low-temperature-deactivation-ge-heavily-n-type-doped-ion-implantation-and-laser-thermal},
}